PART |
Description |
Maker |
CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM 256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM 256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM (M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor RENESAS[Renesas Electronics Corporation]
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CAT22C10J-30-TE13 CAT22C10L-20-TE13 CAT22C10LA-30- |
Nonvolatile CMOS Static RAM, 256 bit 256-Bit Nonvolatile CMOS Static RAM
|
CATALYST[Catalyst Semiconductor] http://
|
IC62LV51216LL IC62LV51216L IC62LV51216L-55B IC62LV |
512 K x 16 bit Low Voltage and Ultra Low Power CMOS Static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
KM6264B KM6264BLP-7L KM6264BLG-10 KM6264BLG-10L KM |
8K x 8 bit CMOS static RAM, 100ns, low low power 8K x 8 bit Low Power CMOS Static RAM 8Kx8 bit Low Power CMOS Static RAM 8Kx8位低功耗CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
CAT22C10LI-20 |
256 bit NV CMOS Static RAM 64 X 4 NON-VOLATILE SRAM, 200 ns, PDIP18
|
ON Semiconductor
|
62C256 IS62C256-7 IS62C256-4 IS62C256-70T IS62C256 |
32K x 8 Low Power CMOS Static RAM(32K x 8 浣????MOS???RAM) 32K x 8 LOW POWER CMOS STATIC RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] ETC[ETC] Integrated Silicon Solution Inc
|
IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM From old datasheet system ASYNCHRONOUS STATIC RAM
|
ICSI
|
K6F4016R4E-EF85 K6F4016R4E-F K6F4016R4E-EF70 K6F40 |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM MoBL2 4-Mb (256K x 16) Static RAM MoBL® 4-Mbit (256K x 16) Static RAM 5V, 3.3V, ISR High-Performance CPLDs Licorice Board (CY22150 Candy Board) EEPROM MoBL® 4-Mbit (512K x 8) Static RAM EEPROM MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM MoBL® 2-Mbit (128K x 16) Static RAM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc. 3M Company
|